Program Number & Presentation Time

Session 41, Display Manufacturing Methods and Equipment, Number 41.3, Presentation time: June 2, 10:20- 12:20

 

 

Contents (Introduction to the basic concept of BLDA)

・Introduction of three important experimental results and expected applications of BLDA research

 

・Successful polysilicon on copper and other low-melting-point metal bottom gate TFTs, and introduction of low-cost LTPS technology. Reduction of investment cost and low-cost realization of active-matrix mini-LED backlight by using this technology.
 

・Lateral polysilicon crystals with large grain size and low surface roughness were obtained in top-gate TFT structure. By taking advantage of the low surface irregularity of lateral polysilicon, it is possible to increase the durability of TFT under electrical stress, mechanical bending and folding, and to improve the performance of flexible and foldable devices.
 

・In the top-gate TFT structure, single crystal silicon is realized by attaching a SiO2 cap layer to a large grained amorphous silicon film and optimizing the annealing conditions.