Using blue laser diode annealing (BLDA),we have fabricated a lateral silicon crystal on a bottom-gate Cu electrode without cracks orelectrode ablation. However, damage to the substrate has been an issue.In this research, we have succeeded in reducing the damage byadopting a narrow beam size and high scanning speed to reduce the heatgenerated during annealing. In my presentation, we talked about the evaluation of Si crystals fabricated on Cu electrodes, the results of cross-sectional SEM without metal damage, and the relationship between laser irradiation time and damage.

 

The newly developed BLDA system is expected to be applied to Mini LED backlight and OLED because of its high TFT mobility and low cost. The BLDA system is expected to be applied to Mini LED backlights and OLEDs because of its high TFT mobility and low cost. We have been researching and developing this technology to contribute to the reduction of backplane manufacturing cost and improvement of image quality, and presented it at the virtual conference on May 17.

 

On the day of the conference, we received many inquiries despite the fact that the presentation was online, confirming once again the high level of interest. We would like to thank you for taking time out of your busy schedule to attend the conference.